*Components
Brand: NEC
NEC EB2-5NU SMD Relay.5V Coil Voltage, High DC Voltage (220V) contact rating>100million operations at no loadMade in JapanContact Rating:Maximum Switching Power: 62.5VAMaximum Switching Voltage: 220VDC/250VACMaximum Switching Current: 1AMaximum Carrying Current: 2AIntial Contact Resistance: 0.05RCon..
₱35.00
True rated Lipo Battery with built-in BMS protection board.Nominal Voltage: 3.8VCapacity: 2200mAh 8.36WhYear Manufactured: 2015-2016Dimensions:50Wx60Lx5.2T approx.Note: This is a brand new high quality Lipo battery offered at a huge discount because it has never been put into use since 2015. It stil..
₱190.00
Brand: IR
Short SpecificationsDrain Current : -8.0 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.0V maxOn Resistance: 0.02 ohms @ Vgs=10VTotal Gate Charge: 60 nC Package/Image: SOIC-8..
₱27.00
Brand: IR
Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 30/-30 VDCGate Threshold Voltage: 1.0/-1.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 14/12 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications:Drain Current : -20A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -1.3 to -2.4VOn Resistance: 0.0046 ohms @ Vgs=-10VTotal Gate Charge:58 nC Package/Image: SOIC-8..
₱36.00
Brand: IR
Short Specifications:Drain Current : -10A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -2.04VOn Resistance: 0.02 ohms @ Vgs=-10VTotal Gate Charge:92 nC Package/Image: SOIC-8..
₱33.00
Brand: IR
Short Specifications (N-Channel/P-Channel)Drain Current : 6.6/-5.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 20/-20 VDCGate Threshold Voltage: 0.7/-0.7VOn Resistance: 0.029/0.058 ohms @ Vgs=10VTotal Gate Charge: 27/29 nC Package/Image: SOIC-8..
₱35.00
Brand: IR
Short Specifications (Per device)Drain Current : -4.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: -20 VDCGate Threshold Voltage: -0.7VOn Resistance: 0.09 ohms @ Vgs=10VTotal Gate Charge: 22 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications:Drain Current : -10.5A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -40 VDCGate Threshold Voltage: -3.0On Resistance: 0.015 ohms @ Vgs=-10VTotal Gate Charge:110 nC Package/Image: SOIC-8..
₱33.00
Brand: IR
Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 25/-25 VDCGate Threshold Voltage: 3.0/-3.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 27/25 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications (Per device)Drain Current : 3.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 50 VDCGate Threshold Voltage: 3.0VOn Resistance: 0.13 ohms @ Vgs=10VTotal Gate Charge: 30 nC Package/Image: SOIC-8..
₱27.00
Brand: IR
Short Specifications:Drain Current : -0.7 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -150 VDCGate Threshold Voltage: -5.0On Resistance: 2.4 ohms @ Vgs=10VTotal Gate Charge: 9 nC Package/Image: SOIC-8..
₱22.00



