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Brand: IR
Short Specifications (Per device)Drain Current : 8.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 60 VDCGate Threshold Voltage: 2.0-4.0VOn Resistance: 0.018 ohms @ Vgs=10VTotal Gate Charge: 36 nC Package/Image: SOIC-8..
₱36.00
Brand: IR
Short Specifications (Per device)Drain Current : 7.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 20 VDCGate Threshold Voltage: 1.20VOn Resistance: 0.03 ohms @ Vgs=10VTotal Gate Charge: 20 nC Package/Image: SOIC-8..
₱30.00
Brand: IR
Short Specifications (Per device)Drain Current : -8.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: -30 VDCGate Threshold Voltage: -0.7VOn Resistance: 0.021 ohms @ Vgs=10VTotal Gate Charge: 27 nC Package/Image: SOIC-8..
₱34.00
Brand: IR
Short Specifications (N-Channel/P-Channel)Drain Current : 6.6/-5.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 20/-20 VDCGate Threshold Voltage: 0.7/-0.7VOn Resistance: 0.029/0.058 ohms @ Vgs=10VTotal Gate Charge: 27/29 nC Package/Image: SOIC-8..
₱35.00
Brand: IR
Short Specifications (Per device)Drain Current : -5.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: -20 VDCGate Threshold Voltage: -0.7VOn Resistance: 0.058 ohms @ Vgs=10VTotal Gate Charge: 29 nC Package/Image: SOIC-8..
₱34.00
Brand: IR
Short Specifications (Per device)Drain Current : -4.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: -20 VDCGate Threshold Voltage: -0.7VOn Resistance: 0.09 ohms @ Vgs=10VTotal Gate Charge: 22 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications (Per device)Drain Current : 4.9 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.0VOn Resistance: 0.05 ohms @ Vgs=10VTotal Gate Charge: 25 nC Package/Image: SOIC-8..
₱28.00
Brand: IR
Short Specifications:Drain Current : -10.5A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -40 VDCGate Threshold Voltage: -3.0On Resistance: 0.015 ohms @ Vgs=-10VTotal Gate Charge:110 nC Package/Image: SOIC-8..
₱33.00
Brand: IR
Short Specifications (N-Channel/P-Channel)Drain Current : 3.5/-2.3 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 25/-25 VDCGate Threshold Voltage: 3.0/-3.0VOn Resistance: 0.1/0.25 ohms @ Vgs=10VTotal Gate Charge: 27/25 nC Package/Image: SOIC-8..
₱32.00
Brand: IR
Short Specifications (Per device)Drain Current : 3.0 A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage: 50 VDCGate Threshold Voltage: 3.0VOn Resistance: 0.13 ohms @ Vgs=10VTotal Gate Charge: 30 nC Package/Image: SOIC-8..
₱27.00
Brand: IR
Short Specifications:Drain Current : -0.7 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: -150 VDCGate Threshold Voltage: -5.0On Resistance: 2.4 ohms @ Vgs=10VTotal Gate Charge: 9 nC Package/Image: SOIC-8..
₱22.00
Brand: Nippon Chemicon
Genuine Nippon Chemi-con 3300uF/16V LXZ Series Electrolytic Capacitor.Capacitance: 3300uF +/-20%Impedance: 0.022R @ 100KHz 20CDissipation Factor: 0.16Rated Ripple Current: 2510mATemperature: -55 to +105CSize: D12.5 x 35mmLead Spacing: 5mm..
₱21.00