N Channel MOSFETS

Marking: QJ848Grade: AutomotiveDrain Source Voltage: 40VContinous Drain Current: 47AON State Resistance: 0.0075RGate Threshold Voltage: 2.5V typ.Input Capacitance: 2500pF max.Output Capacitance: 260pF typ.Turn on Delay: 40nsRise time: 20nsTurn off Delay: 40nsFall time: 15ns Package/Image: SO-8L..

Marking: 4N0405Drain Source Voltage: 40VContinous Drain Current: 86AON State Resistance: 0.0052RGate Threshold Voltage: 3.0V typ.Input Capacitance: 2960pF max.Output Capacitance: 730pF max.Turn on Delay: 9nsRise time: 11nsTurn off Delay: 7nsFall time: 10ns Package/Image: DPAK..

Marking: 983255Grade: AutomotiveDrain Source Voltage: 55VContinous Drain Current: 12AON State Resistance: 36mRGate Threshold Voltage: 1.5V typ.Input Capacitance: 1594pF max.Output Capacitance: 254pF max.Turn on Delay: 14nsRise time: 125nsTurn off Delay: 64nsFall time: 68ns Package/Image: SOT223..

Short SpecificationsDrain Current : 13.5 A @ 25C max.Power Dissipation: 1;4WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 3.0V maxOn Resistance: 0.0085 ohms @ Vgs=10VTotal Gate Charge: 50 nC Package/Image: SOIC-8..

Short Specifications (Per device)Drain Current : 10 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.0On Resistance: 0.0135 ohms @ Vgs=10VTotal Gate Charge: 45 nC Package/Image: SOIC-8..

Short Specifications (Q1/Q2)Drain Current : 9.1/11A @ 25C max.Power Dissipation: 2WDrain to Source Breakdown Voltage:30 VDCGate Threshold Voltage: 1.35-2.35VOn Resistance: 0.0164/0.0118 ohms @ Vgs=10VTotal Gate Charge: 10/21 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 21 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.35-2.35VOn Resistance: 0.0033 ohms @ Vgs=10VTotal Gate Charge: 45 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 12A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 60 VDCGate Threshold Voltage: 3.0-4.9VOn Resistance: 0.009 ohms @ Vgs=10VTotal Gate Charge: 39 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 8.3A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 100 VDCGate Threshold Voltage: 3.0-4.9VOn Resistance: 0.018 ohms @ Vgs=10VTotal Gate Charge: 39 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 18 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 40 VDCGate Threshold Voltage: 1.35-2.25VOn Resistance: 0.005 ohms @ Vgs=10VTotal Gate Charge: 50 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 20 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1.39-2.32VOn Resistance: 0.004 ohms @ Vgs=10VTotal Gate Charge: 51 nC Package/Image: SOIC-8..

Short SpecificationsDrain Current : 10.8 A @ 25C max.Power Dissipation: 2.5WDrain to Source Breakdown Voltage: 30 VDCGate Threshold Voltage: 1-3.0VOn Resistance: 0.011 ohms @ Vgs=4.5VTotal Gate Charge: 26 nC Package/Image: SOIC-8..